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NTHS5443
THERMAL CHARACTERISTICS
Characteristic
Maximum Junction?to?Ambient (Note 2)
t v 5s
Steady State
Maximum Junction?to?Foot (Drain)
Symbol
R q JA
R q JF
Typ
40
80
15
Max
50
95
20
Unit
° C/W
° C/W
Steady State
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate?Body Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = ?250 m A
V DS = 0 V, V GS = " 12 V
V DS = ?16 V, V GS = 0 V
?0.6
" 100
?1.0
V
nA
m A
V DS = ?16 V, V GS = 0 V,
T J = 85 ° C
?5.0
On?State Drain Current (Note 3)
I D(on)
V DS v ?5.0 V, V GS = ?4.5 V
?15
A
Drain?Source On?State Resistance
(Note 3)
r DS(on)
V GS = ?4.5 V, I D = ?3.6 A
V GS = ?3.6 V, I D = ?3.3 A
0.056
0.065
0.065
0.074
W
V GS = ?2.5 V, I D = ?2.7 A
0.095
0.110
Forward Transconductance (Note 3)
g fs
V DS = ?10 V, I D = ?3.6 A
10
S
Diode Forward Voltage (Note 3)
V SD
I S = ?1.1 A, V GS = 0 V
?0.8
?1.2
V
Dynamic (Note 4)
Total Gate Charge
Q G
7.5
12
nC
Gate?Source Charge
Gate?Drain Charge
Q GS
Q GD
V DS = ?10 V, V GS = ?4.5 V,
I D = ?3.6 A
0.9
2.2
2.8
?
Turn?On Delay Time
t d(on)
8.5
13
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = ?10 V, R L = 10 W
I D ^ ?1.0 A, V GEN = ?4.5 V,
R G = 6 W
14
38
30
21
57
45
Source?Drain Reverse Recovery Time
t rr
I F = ?1.1 A, di/dt = 100 A/ m s
30
60
ns
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
http://onsemi.com
2
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